Technical parameters/dissipated power: 1.5 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/rated power (Max): 400 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 400 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 14
Encapsulation parameters/Encapsulation: TO-116-14
External dimensions/packaging: TO-116-14
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 功能相似 | Flatpack-14 |
Small Signal Bipolar Transistor, 4-Element, NPN, Silicon, TO-86,
|
||
JANS2N6990
|
Semicoa Semiconductor | 完全替代 |
Trans GP BJT NPN 50V 0.8A 14Pin SBCDIP
|
|||
|
|
Microchip | 功能相似 | Tray |
Trans GP BJT NPN 50V 0.8A 14Pin FPAK
|
||
|
|
Semicoa Semiconductor | 功能相似 |
Trans GP BJT NPN 50V 0.8A 14Pin FPAK
|
|||
JANTX2N6990
|
Microsemi | 功能相似 | Flatpack-14 |
Trans GP BJT NPN 50V 0.8A 14Pin FPAK
|
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