Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 200 mA
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 1.2 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 0.4 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 200 mA
Technical parameters/Input capacitance (Ciss): 50pF @25V(Vds)
Technical parameters/rated power (Max): 400 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7000
|
Diodes | 功能相似 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
||
2N7000
|
ST Microelectronics | 功能相似 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
||
2N7000
|
TI | 功能相似 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
|||
|
|
Suptertex | 功能相似 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
|||
|
|
Supertex | 功能相似 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
||
2N7000
|
NTE Electronics | 功能相似 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
||
2N7000
|
Calogic | 功能相似 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
||
|
2N7000
|
InterFET | 功能相似 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
|||
2N7000
|
Major Brands | 功能相似 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
|||
2N7000
|
Diotec Semiconductor | 功能相似 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
||
2N7000
|
UTC | 功能相似 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
||
|
2N7000
|
National Semiconductor | 功能相似 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
|||
2N7000
|
ON Semiconductor | 功能相似 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
||
|
2N7000G
|
Supertex | 功能相似 | TO-92 |
ON SEMICONDUCTOR 2N7000G 晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 3 V
|
||
2N7000RLRAG
|
ON Semiconductor | 功能相似 | TO-92-3 |
N 通道功率 MOSFET，60V，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
||
2N7000_D74Z
|
ON Semiconductor | 类似代替 | TO-226-3 |
MOSFET N-CH 60V 200mA TO-92
|
||
ZVN3306A
|
Diodes Zetex | 功能相似 | TO-92-3 |
ZVN3306A 系列 60 V 5 Ohm N-沟道 增强模式 垂直 DMOS FET- TO-92
|
||
ZVN3306A
|
Diodes | 功能相似 | TO-226-3 |
ZVN3306A 系列 60 V 5 Ohm N-沟道 增强模式 垂直 DMOS FET- TO-92
|
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