Technical parameters/rated voltage (DC): -40.0 V
Technical parameters/rated current: -4.00 A
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 4A
Technical parameters/minimum current amplification factor (hFE): 750 @2A, 3V
Technical parameters/Maximum current amplification factor (hFE): 15000
Technical parameters/rated power (Max): 40 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/packaging: TO-126-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Other/Minimum Packaging: 500
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Central Semiconductor | 功能相似 | TO-126 |
Trans Darlington PNP 40V 4A 1500mW 3Pin(3+Tab) TO-126 Box
|
||
2N6034
|
ST Microelectronics | 功能相似 |
Trans Darlington PNP 40V 4A 1500mW 3Pin(3+Tab) TO-126 Box
|
|||
|
|
ON Semiconductor | 功能相似 | TO-126-3 |
Trans Darlington PNP 40V 4A 1500mW 3Pin(3+Tab) TO-126 Box
|
||
|
|
ON Semiconductor | 功能相似 | TO-126-3 |
ON SEMICONDUCTOR 2N6034G 双极晶体管
|
||
2N6034G
|
Rochester | 功能相似 | CASE 77-09 |
ON SEMICONDUCTOR 2N6034G 双极晶体管
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review