Technical parameters/frequency: 1 kHz
Technical parameters/rated voltage (DC): 3.00 V
Technical parameters/rated current: 5 mA
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/drain source voltage (Vds): 30.0 V
Technical parameters/breakdown voltage of gate source: 30.0 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Technical parameters/rated voltage: 30 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5953
|
Freescale | 功能相似 |
射频结栅场效应晶体管(RF JFET)晶体管 N-Ch FET 30Vgs Engineering Hold
|
|||
2N5953
|
Fairchild | 功能相似 | TO-92-3 |
射频结栅场效应晶体管(RF JFET)晶体管 N-Ch FET 30Vgs Engineering Hold
|
||
2N5953LEADFREE
|
Central Semiconductor | 功能相似 | TO-92 |
RF Small Signal Field-Effect Transistor, 1Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, TO-92, 3Pin
|
||
|
|
Central Semiconductor | 功能相似 |
RF Small Signal Field-Effect Transistor, 1Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review