Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 4.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 40 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 4A
Technical parameters/minimum current amplification factor (hFE): 750 @2A, 3V
Technical parameters/Maximum current amplification factor (hFE): 15000
Technical parameters/rated power (Max): 40 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/length: 7.74 mm
External dimensions/width: 2.66 mm
External dimensions/height: 11.04 mm
External dimensions/packaging: TO-126-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Other/Minimum Packaging: 500
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ST Microelectronics | 功能相似 | TO-225 |
4A, 60V, NPN, Si, POWER TRANSISTOR, TO-225AA
|
||
2N6038
|
ON Semiconductor | 功能相似 | TO-126-3 |
4A, 60V, NPN, Si, POWER TRANSISTOR, TO-225AA
|
||
2N6038
|
Advanced Semiconductor | 功能相似 |
4A, 60V, NPN, Si, POWER TRANSISTOR, TO-225AA
|
|||
2N6038G
|
ON Semiconductor | 功能相似 | TO-225-3 |
ON SEMICONDUCTOR 2N6038G 达林顿双极晶体管
|
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