Technical parameters/rated voltage (DC): 45.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/minimum current amplification factor (hFE): 600 @10mA, 5V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5962
|
TI | 功能相似 |
双极晶体管 - 双极结型晶体管(BJT) NPN Gen Pur SS
|
|||
2N5962
|
Fairchild | 功能相似 | TO-226-3 |
双极晶体管 - 双极结型晶体管(BJT) NPN Gen Pur SS
|
||
2N5962
|
Freescale | 功能相似 | TO-92 |
双极晶体管 - 双极结型晶体管(BJT) NPN Gen Pur SS
|
||
2N5962LEADFREE
|
Central Semiconductor | 功能相似 | TO-92 |
Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
|
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