Technical parameters/drain source resistance: 1.20 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 200 mW
Technical parameters/leakage source breakdown voltage: 15.0 V
Technical parameters/breakdown voltage of gate source: 30.0 V
Technical parameters/Continuous drain current (Ids): 5.00 mA
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
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