Technical parameters/rated current: 10.0 mA
Technical parameters/drain source resistance: 150 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/breakdown voltage of gate source: -25.0 V
Technical parameters/Continuous drain current (Ids): 5.00 mA
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
New Jersey Semiconductor | 功能相似 |
射频结栅场效应晶体管(RF JFET)晶体管 NCh RF Transistor
|
|||
2N5484
|
Micro Electronics | 功能相似 | TO-92 |
射频结栅场效应晶体管(RF JFET)晶体管 NCh RF Transistor
|
||
2N5484
|
Fairchild | 功能相似 | TO-92-3 |
射频结栅场效应晶体管(RF JFET)晶体管 NCh RF Transistor
|
||
2N5484
|
Intersil | 功能相似 |
射频结栅场效应晶体管(RF JFET)晶体管 NCh RF Transistor
|
|||
2N5484
|
Vishay Semiconductor | 功能相似 | TO-226 |
射频结栅场效应晶体管(RF JFET)晶体管 NCh RF Transistor
|
||
2N5484
|
Motorola | 功能相似 |
射频结栅场效应晶体管(RF JFET)晶体管 NCh RF Transistor
|
|||
2N5484
|
VISHAY | 功能相似 | TO-92 |
射频结栅场效应晶体管(RF JFET)晶体管 NCh RF Transistor
|
||
2N5484
|
Calogic | 功能相似 | TO-92 |
射频结栅场效应晶体管(RF JFET)晶体管 NCh RF Transistor
|
||
|
|
Vishay Siliconix | 功能相似 | TO-226 |
Trans JFET N-CH 3Pin TO-226AA
|
||
2N5668
|
Solitron Devices | 功能相似 | TO-92 |
RF Small Signal Field-Effect Transistor, 1Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, TO-92, 3Pin
|
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