Technical parameters/breakdown voltage (collector emitter): 15 V
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N2925
|
NTE Electronics | 功能相似 | TO-226 |
NTE ELECTRONICS 2N2925 Bipolar (BJT) Single Transistor, NPN, 50V, 360mW, 100mA, 400 hFE
|
||
2N2925
|
Central Semiconductor | 功能相似 | TO-226-3 |
NTE ELECTRONICS 2N2925 Bipolar (BJT) Single Transistor, NPN, 50V, 360mW, 100mA, 400 hFE
|
||
2N2925
|
Motorola | 功能相似 | TO-92 |
NTE ELECTRONICS 2N2925 Bipolar (BJT) Single Transistor, NPN, 50V, 360mW, 100mA, 400 hFE
|
||
2N5769
|
ON Semiconductor | 功能相似 | TO-226-3 |
Small Signal Transistors
|
||
2N5769
|
Fairchild | 功能相似 | TO-92-3 |
Small Signal Transistors
|
||
2N5769
|
Micross | 功能相似 |
Small Signal Transistors
|
|||
BC108C
|
Multicomp | 功能相似 | TO-18 |
MULTICOMP BC108C 单晶体管 双极, 通用, NPN, 25 V, 150 MHz, 600 mW, 200 mA, 420 hFE
|
||
BC560B
|
Continental Device | 功能相似 |
Transistor PNP BC560/BC560B CONTINENTAL DEVICE RoHS Ampere=1V=45 TO92
|
|||
MPSA62
|
ON Semiconductor | 功能相似 | TO-92 |
达林顿晶体管( PNP硅) Darlington Transistors(PNP Silicon)
|
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