Technical parameters/dissipated power: 1 W
Technical parameters/gain bandwidth product: 30 MHz
Technical parameters/minimum current amplification factor (hFE): 40
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-39-3
External dimensions/length: 9.4 mm
External dimensions/width: 9.4 mm
External dimensions/height: 6.6 mm
External dimensions/packaging: TO-39-3
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 功能相似 | TO-39 |
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
|
||
2N5681
|
ST Microelectronics | 功能相似 | TO-39-3 |
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
|
||
2N5681
|
API Technologies | 功能相似 |
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
|
|||
JANTX2N5681
|
Microsemi | 完全替代 | TO-39 |
Trans GP BJT NPN 100V 1A 3Pin TO-39
|
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