Technical parameters/rise/fall time: 3 µs
Technical parameters/output voltage: 80.0 V
Technical parameters/number of channels: 1
Technical parameters/forward voltage: 1.3V (Max)
Technical parameters/input current: 50.0 mA
Technical parameters/dissipated power: 150 mW
Technical parameters/rise time: 3 µs
Technical parameters/isolation voltage: 3750 Vrms
Technical parameters/forward current: 50 mA
Technical parameters/output voltage (Max): 80 V
Technical parameters/input current (Min): 50 mA
Technical parameters/breakdown voltage: 6 V
Technical parameters/forward voltage (Max): 1.4 V
Technical parameters/forward current (Max): 50 mA
Technical parameters/descent time: 3 µs
Technical parameters/operating temperature (Max): 110 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: 4-Mini-Flat
External dimensions/length: 3.85 mm
External dimensions/width: 4.4 mm
External dimensions/height: 2.2 mm
External dimensions/packaging: 4-Mini-Flat
Physical parameters/operating temperature: -40℃ ~ 110℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Box
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FODM121BR2
|
ON Semiconductor | 类似代替 | MFP-4 |
Fairchild Semiconductor ### 光耦合器，Fairchild Semiconductor
|
||
FODM121BR2
|
Fairchild | 类似代替 | 4-Mini-Flat |
Fairchild Semiconductor ### 光耦合器，Fairchild Semiconductor
|
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