Technical parameters/rated voltage (DC): 25.0 V
Technical parameters/rated current: 15 mA
Technical parameters/breakdown voltage: -25.0 V
Technical parameters/drain source resistance: 150 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/breakdown voltage of gate source: 25.0 V
Technical parameters/Continuous drain current (Ids): 15.0 mA
Technical parameters/rated voltage: 25 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5555
|
Fairchild | 功能相似 | TO-226-3 |
Transistor,
|
||
2N5555
|
Solitron Devices | 功能相似 |
Transistor,
|
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