Encapsulation parameters/installation method: Through Hole
Other/FET types: N-Channel
Other/Different Id Voltage Off (VGSoff): 3V @ 3nA
Other/working temperature: -55°C ~ 150°C(TJ)
Other/Packaging/Shell: TO-206AC,TO-52-3,metal can
Other/different Vds input capacitance (Ciss) (maximum value): 30pF @ 0V
Other/Power: 300mW
Other/Voltage breakdown (V (BR) GSS): 25V
Current drain (Idss) at other/different Vds (Vgs=0): 100mA @ 15V
Compliant with standards/RoHS standards: RoHS Compliant
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