Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 160 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 80 @10mA, 5V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 类似代替 | TO-92 |
双极晶体管 - 双极结型晶体管(BJT) NPN Transistor General Purpose
|
||
2N5551CTA
|
Freescale | 类似代替 |
双极晶体管 - 双极结型晶体管(BJT) NPN Transistor General Purpose
|
|||
2N5551CTA
|
Fairchild | 类似代替 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) NPN Transistor General Purpose
|
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