Technical parameters/rated voltage (DC): 140 V
Technical parameters/rated current: 600 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 625 mW
Technical parameters/gain bandwidth product: 300 MHz
Technical parameters/breakdown voltage (collector emitter): 140 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 60 @10mA, 5V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5550G
|
ON Semiconductor | 类似代替 | TO-226-3 |
ON SEMICONDUCTOR 2N5550G. 单晶体管 双极, 通用, NPN, 140 V, 300 MHz, 625 mW, 600 mA, 60 hFE
|
||
2N5550RLRA
|
ON Semiconductor | 完全替代 | TO-226-3 |
放大器晶体管 Amplifier Transistors
|
||
2N5550RLRP
|
ON Semiconductor | 完全替代 | TO-226-3 |
放大器晶体管 Amplifier Transistors
|
||
2N5550RLRP
|
DAYA | 完全替代 |
放大器晶体管 Amplifier Transistors
|
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