Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 1A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-126
External dimensions/packaging: TO-126
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 功能相似 | CASE 221A-06 |
t-Npn Si-Gen Pur Amp Sw
|
||
2N6387
|
ST Microelectronics | 功能相似 | SFM |
t-Npn Si-Gen Pur Amp Sw
|
||
2N6387
|
NTE Electronics | 功能相似 |
t-Npn Si-Gen Pur Amp Sw
|
|||
2N6387
|
Central Semiconductor | 功能相似 | TO-220-3 |
t-Npn Si-Gen Pur Amp Sw
|
||
2N6387
|
ON Semiconductor | 功能相似 | TO-220-3 |
t-Npn Si-Gen Pur Amp Sw
|
||
BD787
|
Motorola | 功能相似 |
Complementary Plastic Silicon Power Transistors
|
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