Technical parameters/rated voltage (DC): -160 V
Technical parameters/rated current: -600 mA
Technical parameters/breakdown voltage (collector emitter): 150 V
Technical parameters/minimum current amplification factor (hFE): 60 @10mA, 5V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5401TA
|
ON Semiconductor | 完全替代 | TO-226-3 |
PNP外延硅晶体管 PNP Epitaxial Silicon Transistor
|
||
2N5401TFR
|
Fairchild | 完全替代 | TO-92-3 |
Trans GP BJT PNP 150V 0.6A 3Pin TO-92 T/R
|
||
2N5401TFR
|
ON Semiconductor | 完全替代 |
Trans GP BJT PNP 150V 0.6A 3Pin TO-92 T/R
|
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