Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 5A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5151
|
Central Semiconductor | 功能相似 | TO-39 |
PNP功率硅晶体管 PNP POWER SILICON TRANSISTOR
|
||
JANTXV2N5151
|
Microsemi | 功能相似 | TO-205 |
PNP功率硅晶体管 PNP POWER SILICON TRANSISTOR
|
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