Technical parameters/polarity: NPN
Technical parameters/power consumption: 625 mW
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 400
Technical parameters/Maximum current amplification factor (hFE): 1200
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Product Lifecycle: Active
Other/Minimum Packaging: 2000
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCX38C
|
Diodes | 功能相似 | TO-92-3 |
BCX38C 编带
|
||
BCX38C
|
Zetex | 功能相似 |
BCX38C 编带
|
|||
|
|
LGE | 功能相似 | SOT-23 |
Small Signal Bipolar Transistor, 0.2A I(C), PNP,
|
||
MMBT3906LT1
|
Infineon | 功能相似 | SOT-23 |
Small Signal Bipolar Transistor, 0.2A I(C), PNP,
|
||
MMBT3906LT1
|
SynSemi | 功能相似 |
Small Signal Bipolar Transistor, 0.2A I(C), PNP,
|
|||
MMBT3906LT1G
|
Rochester | 功能相似 | SOT-23 |
ON SEMICONDUCTOR MMBT3906LT1G 单晶体管 双极, 通用, PNP, -40 V, 250 MHz, 225 mW, -200 mA, 300 hFE
|
||
MMBT3906LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBT3906LT1G 单晶体管 双极, 通用, PNP, -40 V, 250 MHz, 225 mW, -200 mA, 300 hFE
|
||
ZTX653
|
Diodes Zetex | 功能相似 | E-Line |
ZTX653 系列 NPN 2 A 100 V 硅 平面 中等功率 晶体管 - TO-92-3
|
||
ZTX653
|
Zetex | 功能相似 | TO-92-3 |
ZTX653 系列 NPN 2 A 100 V 硅 平面 中等功率 晶体管 - TO-92-3
|
||
ZTX653
|
Diodes | 功能相似 | TO-92-3 |
ZTX653 系列 NPN 2 A 100 V 硅 平面 中等功率 晶体管 - TO-92-3
|
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