Technical parameters/rated voltage (DC): -120 V
Technical parameters/rated current: -600 mA
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 120 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 40 @10mA, 5V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5400G
|
ON Semiconductor | 类似代替 | TO-226-3 |
放大器晶体管PNP硅 Amplifier Transistors PNP Silicon
|
||
2N5400RA
|
Freescale | 类似代替 |
Trans GP BJT PNP 120V 0.6A 3Pin TO-92 T/R
|
|||
2N5400RA
|
Fairchild | 类似代替 | TO-92-3 |
Trans GP BJT PNP 120V 0.6A 3Pin TO-92 T/R
|
||
2N5400RA
|
ON Semiconductor | 类似代替 |
Trans GP BJT PNP 120V 0.6A 3Pin TO-92 T/R
|
|||
2N5400RLRPG
|
ON Semiconductor | 完全替代 | TO-92-3 |
放大器晶体管PNP硅 Amplifier Transistors PNP Silicon
|
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