Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 1.20 A
Technical parameters/polarity: N-Channel, NPN
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 2000 @2mA, 5V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.58 mm
External dimensions/width: 3.86 mm
External dimensions/height: 4.58 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5307
|
Rochester | 功能相似 | TO-92 |
NPN通用放大器 NPN General Purpose Amplifier
|
||
2N5307
|
Fairchild | 功能相似 | TO-92-3 |
NPN通用放大器 NPN General Purpose Amplifier
|
||
2N5307
|
New Jersey Semiconductor | 功能相似 |
NPN通用放大器 NPN General Purpose Amplifier
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review