Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 120 V
Technical parameters/maximum allowable collector current: 10A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5237S
|
Microsemi | 完全替代 | TO-39 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
||
JANTX2N5237
|
Microchip | 类似代替 | Foil Bag |
Trans GP BJT NPN 120V 10A 3Pin TO-5
|
||
JANTX2N5237
|
Semicoa Semiconductor | 类似代替 | TO-5 |
Trans GP BJT NPN 120V 10A 3Pin TO-5
|
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