Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 200 @100µA, 5V
Technical parameters/Maximum current amplification factor (hFE): 600
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5210TA
|
Fairchild | 类似代替 | TO-92-3 |
NPN 晶体管,40V 至 50V,Fairchild Semiconductor ### 双极晶体管,Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案,用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
2N5210TAR
|
Fairchild | 完全替代 | TO-226-3 |
Trans GP BJT NPN 50V 0.1A 3Pin TO-92 Ammo
|
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