Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/minimum current amplification factor (hFE): 100 @10mA, 10V
Technical parameters/rated power (Max): 625 mW
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/width: 4.19 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5172
|
Central Semiconductor | 功能相似 | TO-226-3 |
Npn 100mA 25V To-98
|
||
2N5172
|
ON Semiconductor | 功能相似 | TO-92 |
Npn 100mA 25V To-98
|
||
2N5172
|
Fairchild | 功能相似 | TO-92-3 |
Npn 100mA 25V To-98
|
||
2N5172LEADFREE
|
Central Semiconductor | 功能相似 | TO-92 |
TO-92 NPN 25V 0.1A
|
||
MPS5172G
|
ON Semiconductor | 类似代替 | TO-226-3 |
通用晶体管NPN硅 General Purpose Transistor NPN Silicon
|
||
MPS6521
|
ON Semiconductor | 功能相似 | TO-92-3 |
NPN通用放大器 NPN General Purpose Amplifier
|
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