Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.2 W
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/gain: 25 dB
Technical parameters/maximum allowable collector current: 0.03A
Technical parameters/minimum current amplification factor (hFE): 30 @5mA, 10V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SMD-3
External dimensions/packaging: SMD-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 完全替代 | SMD-3 |
PNP 30V 0.03A
|
||
|
|
Microchip | 完全替代 | Waffle |
PNP 30V 0.03A
|
||
JANTXV2N4957UB
|
Semicoa Semiconductor | 完全替代 | CSOT-23 |
PNP 30V 0.03A
|
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