Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 50 @150mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 250
Technical parameters/rated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Raytheon | 功能相似 |
1W General Purpose PNP Metal Can Transistor. 40V Vceo, 1A Ic, 50 - 250 hFE.
|
|||
2N4037
|
CDIL | 功能相似 |
1W General Purpose PNP Metal Can Transistor. 40V Vceo, 1A Ic, 50 - 250 hFE.
|
|||
2N4037
|
Continental Device | 功能相似 |
1W General Purpose PNP Metal Can Transistor. 40V Vceo, 1A Ic, 50 - 250 hFE.
|
|||
2N4037
|
Central Semiconductor | 功能相似 | TO-39 |
1W General Purpose PNP Metal Can Transistor. 40V Vceo, 1A Ic, 50 - 250 hFE.
|
||
2N4037LEADFREE
|
Central Semiconductor | 功能相似 | TO-39 |
TO-39 PNP 40V 1A
|
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