Technical parameters/rated current: 50.0 mA
Technical parameters/breakdown voltage: -40.0 V
Technical parameters/drain source resistance: 60.0 Ω
Technical parameters/polarity: N-Channel
Technical parameters/breakdown voltage of gate source: -40.0 V
Technical parameters/Continuous drain current (Ids): 8.00 mA
Technical parameters/operating temperature (Max): 200 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-18
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-18
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4858
|
Microsemi | 功能相似 | TO-18 |
JFET 40V N-Ch JFET 40Vdg 50mA 360mW
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||
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|
Rochester | 功能相似 |
JFET 40V N-Ch JFET 40Vdg 50mA 360mW
|
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2N4858
|
New Jersey Semiconductor | 功能相似 |
JFET 40V N-Ch JFET 40Vdg 50mA 360mW
|
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2N4858
|
ETC1 | 功能相似 |
JFET 40V N-Ch JFET 40Vdg 50mA 360mW
|
|||
2N4858
|
Microchip | 功能相似 |
JFET 40V N-Ch JFET 40Vdg 50mA 360mW
|
|||
|
|
NJS | 功能相似 |
JFET N-CH 40V 0.36W TO-18
|
|||
|
|
New Jersey Semiconductor | 功能相似 |
JFET N-CH 40V 0.36W TO-18
|
|||
2N4858A
|
Central Semiconductor | 功能相似 | TO-206 |
JFET N-CH 40V 0.36W TO-18
|
||
2N4858A
|
Vishay Semiconductor | 功能相似 | TO-18 |
JFET N-CH 40V 0.36W TO-18
|
||
2N4858A
|
Motorola | 功能相似 |
JFET N-CH 40V 0.36W TO-18
|
|||
2N4858A
|
ETC1 | 功能相似 |
JFET N-CH 40V 0.36W TO-18
|
|||
JANTX2N4858
|
Solitron Devices | 功能相似 | TO-206 |
N沟道J- FET N-CHANNEL J-FET
|
||
JANTX2N4858
|
Microsemi | 功能相似 | TO-206 |
N沟道J- FET N-CHANNEL J-FET
|
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