Technical parameters/drain source resistance: 25 Ω
Technical parameters/dissipated power: 360 mW
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/breakdown voltage: 40 V
Technical parameters/Input capacitance (Ciss): 18pF @10V(Vds)
Technical parameters/rated power (Max): 360 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 360 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-18
External dimensions/packaging: TO-18
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MV2N4856
|
Microsemi | 完全替代 | TO-206 |
Trans JFET N-CH 40V 3Pin TO-18
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review