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Model 2N4264
Description Bipolar transistor - Bipolar junction transistor (BJT) NPN 30Vcbo 15Vceo 6.0Vebo 200mA
Product QR code
Packaging TO-226-3
Delivery time
Packaging method
Standard packaging quantity 1
1.28  yuan 1.28yuan
5+:
$ 1.7294
25+:
$ 1.6013
50+:
$ 1.5116
100+:
$ 1.4732
500+:
$ 1.4475
2500+:
$ 1.4155
5000+:
$ 1.4027
10000+:
$ 1.3835
Quantity
5+
25+
50+
100+
500+
Price
$1.7294
$1.6013
$1.5116
$1.4732
$1.4475
Price $ 1.7294 $ 1.6013 $ 1.5116 $ 1.4732 $ 1.4475
Start batch production 5+ 25+ 50+ 100+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(2707) Minimum order quantity(5)
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Technical parameters/dissipated power: 625 mW

Technical parameters/breakdown voltage (collector emitter): 15 V

Technical parameters/minimum current amplification factor (hFE): 40 @30mA, 1V

Technical parameters/rated power (Max): 625 mW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-226-3

External dimensions/packaging: TO-226-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

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