Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 600 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 1V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Box (TB)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4401TA
|
ON Semiconductor | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N4401TA 单晶体管 双极, NPN, 40 V, 250 MHz, 625 mW, 20 hFE
|
||
2N4401TA
|
Fairchild | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR 2N4401TA 单晶体管 双极, NPN, 40 V, 250 MHz, 625 mW, 20 hFE
|
||
2N4401TF
|
Fairchild | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR 2N4401TF 单晶体管 双极, NPN, 40 V, 250 MHz, 625 mW, 20 hFE
|
||
2N4401TFR
|
ON Semiconductor | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N4401TFR 晶体管, NPN, 40V, TO-92
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review