Technical parameters/dissipated power: 1800 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1800 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-206
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-206
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N439
|
Central Semiconductor | 功能相似 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18,
|
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2N439
|
Calogic | 功能相似 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18,
|
|||
|
|
TT Electronics Resistors | 类似代替 |
MOSFET N-CH 40V 0.1nA TO-18
|
|||
|
|
ETC1 | 类似代替 |
MOSFET N-CH 40V 0.1nA TO-18
|
|||
|
|
Semelab | 类似代替 | TO-18 |
MOSFET N-CH 40V 0.1nA TO-18
|
||
|
|
TT Electronics/BI | 类似代替 |
MOSFET N-CH 40V 0.1nA TO-18
|
|||
|
|
Linear Technology | 类似代替 |
MOSFET N-CH 40V 0.1nA TO-18
|
|||
|
|
Intersil | 类似代替 |
MOSFET N-CH 40V 0.1nA TO-18
|
|||
|
|
Microchip | 类似代替 |
MOSFET N-CH 40V 0.1nA TO-18
|
|||
2N4393
|
Vishay Semiconductor | 类似代替 | TO-18 |
MOSFET N-CH 40V 0.1nA TO-18
|
||
2N4393
|
Motorola | 类似代替 | BCY |
MOSFET N-CH 40V 0.1nA TO-18
|
||
2N4393
|
VISHAY | 类似代替 | TO-206 |
MOSFET N-CH 40V 0.1nA TO-18
|
||
2N4393
|
New Jersey Semiconductor | 类似代替 |
MOSFET N-CH 40V 0.1nA TO-18
|
|||
2N4393-E3
|
Vishay Siliconix | 类似代替 | TO-206 |
Switch, Analog; SPST; SOIC; 45Ω; 0.01nA; 0.02nA; 22V; 30mA
|
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