Technical parameters/breakdown voltage (collector emitter): 15 V
Technical parameters/minimum current amplification factor (hFE): 30 @10mA, 1V
Technical parameters/rated power (Max): 200 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-72-3
External dimensions/packaging: TO-72-3
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4261
|
Semicoa Semiconductor | 功能相似 | TO-72 |
PNP小信号硅晶体管 PNP SMALL SIGNAL SILICON TRANSISTOR
|
||
2N4261
|
Microsemi | 功能相似 | TO-72-3 |
PNP小信号硅晶体管 PNP SMALL SIGNAL SILICON TRANSISTOR
|
||
JANS2N4261
|
Semicoa Semiconductor | 类似代替 | TO-72 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 1Element, Silicon, PNP, TO-72, HERMETIC SEALED, METAL CAN, TO-72, 4Pin
|
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