Technical parameters/breakdown voltage (collector emitter): 15 V
Technical parameters/minimum current amplification factor (hFE): 30 @10mA, 1V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SMD-3
External dimensions/packaging: SMD-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JAN2N4261UB
|
Microchip | 完全替代 |
Trans GP BJT PNP 15V 0.03A 3Pin UB
|
|||
|
|
Microchip | 完全替代 |
UB PNP 15V 0.03A
|
|||
|
|
Microchip | 完全替代 | Waffle |
Trans Pnp 15V 0.03A
|
||
JANTXV2N4261UB
|
Microsemi | 完全替代 | SMD-3 |
Trans Pnp 15V 0.03A
|
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