Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 200 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.2A
Technical parameters/minimum current amplification factor (hFE): 50 @2mA, 1V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Box (TB)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4123TAR
|
ON Semiconductor | 完全替代 | TO-92 |
Trans GP BJT NPN 30V 0.2A 3Pin TO-92 Ammo
|
||
2N4123TF
|
Fairchild | 完全替代 | TO-226-3 |
Trans GP BJT NPN 30V 0.2A 3Pin TO-92 T/R
|
||
2N4123TF
|
ON Semiconductor | 完全替代 | TO-92 |
Trans GP BJT NPN 30V 0.2A 3Pin TO-92 T/R
|
||
2N4123TFR
|
Fairchild | 完全替代 | TO-226-3 |
Trans GP BJT NPN 30V 0.2A 3Pin TO-92 T/R
|
||
2N4123TFR
|
ON Semiconductor | 完全替代 | TO-92 |
Trans GP BJT NPN 30V 0.2A 3Pin TO-92 T/R
|
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