Technical parameters/drain source resistance: 80 Ω
Technical parameters/dissipated power: 300 mW
Technical parameters/leakage source breakdown voltage: 10 V
Technical parameters/breakdown voltage of gate source: 40 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-18-3
External dimensions/packaging: TO-18-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ETC1 | 功能相似 |
N沟道J-FET每个合格的MIL -PRF-四百三十一分之一万九千五 N-CHANNEL J-FET Qualified per MIL-PRF-19500/431
|
|||
|
|
Intersil | 功能相似 |
N沟道J-FET每个合格的MIL -PRF-四百三十一分之一万九千五 N-CHANNEL J-FET Qualified per MIL-PRF-19500/431
|
|||
2N4093
|
InterFET | 功能相似 | TO-18-3 |
N沟道J-FET每个合格的MIL -PRF-四百三十一分之一万九千五 N-CHANNEL J-FET Qualified per MIL-PRF-19500/431
|
||
2N4093
|
Motorola | 功能相似 | TO-18-3 |
N沟道J-FET每个合格的MIL -PRF-四百三十一分之一万九千五 N-CHANNEL J-FET Qualified per MIL-PRF-19500/431
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review