Technical parameters/polarity: PNP
Technical parameters/dissipated power: 625 mW
Technical parameters/gain bandwidth product: 250 MHz
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.2A
Technical parameters/minimum current amplification factor (hFE): 100 @10mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 300
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 4.58 mm
External dimensions/width: 3.86 mm
External dimensions/height: 4.58 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3906TFR
|
Fairchild | 功能相似 | TO-226-3 |
ON Semiconductor 2N3906TFR , PNP 晶体管, 200 mA, Vce=40 V, HFE:60, 250 MHz, 3引脚 TO-92封装
|
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