Technical parameters/number of pins: 2
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 150 W
Technical parameters/breakdown voltage (collector emitter): 80.0 V
Technical parameters/DC current gain (hFE): 180
Technical parameters/operating temperature (Max): 200 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Lifecycle: Unknown
Other/Manufacturing Applications: Industrial, industry
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3790
|
Microsemi | 类似代替 | TO-3 |
Bipolar Transistors - BJT PNP Transistor
|
||
2N3792
|
Boca Semiconductor | 功能相似 |
双极晶体管 - 双极结型晶体管(BJT) PNP Power SW
|
|||
2N3792
|
NTE Electronics | 功能相似 |
双极晶体管 - 双极结型晶体管(BJT) PNP Power SW
|
|||
2N3792
|
Multicomp | 功能相似 | TO-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Power SW
|
||
JANTX2N3792
|
Aeroflex | 功能相似 | TO-3 |
PNP大功率硅晶体管 PNP HIGH POWER SILICON TRANSISTOR
|
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