Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.5A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Other/Product Lifecycle: Active
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3725
|
New Jersey Semiconductor | 类似代替 |
Trans GP BJT NPN 50V 0.5A 3Pin TO-39
|
|||
2N3725
|
Microsemi | 类似代替 | TO-39-3 |
Trans GP BJT NPN 50V 0.5A 3Pin TO-39
|
||
2N3725
|
ST Microelectronics | 类似代替 | TO-39 |
Trans GP BJT NPN 50V 0.5A 3Pin TO-39
|
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