Technical parameters/dissipated power: 1000 mW
Technical parameters/minimum current amplification factor (hFE): 50
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/Encapsulation: TO-39-3
External dimensions/length: 9.4 mm
External dimensions/width: 9.4 mm
External dimensions/height: 6.6 mm
External dimensions/packaging: TO-39-3
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3635
|
New Jersey Semiconductor | 功能相似 |
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN
|
|||
2N3635
|
Motorola | 功能相似 | TO-39 |
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN
|
||
2N3635
|
Central Semiconductor | 功能相似 | TO-39-3 |
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN
|
||
|
|
Microsemi | 功能相似 | TO-39 |
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
|
||
JAN2N3635
|
Semicoa Semiconductor | 功能相似 | TO-39 |
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
|
||
JAN2N3635
|
ON Semiconductor | 功能相似 | TO-39-3 |
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
|
||
JANTX2N3635
|
Raytheon | 功能相似 |
Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-39,
|
|||
JANTX2N3635
|
Microsemi | 功能相似 | TO-39 |
Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-39,
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review