Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTXV2N3634
|
Microsemi | 完全替代 | TO-39 |
PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR
|
||
JANTXV2N3634
|
ON Semiconductor | 完全替代 | TO-39-3 |
PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR
|
||
JANTXV2N3634L
|
ON Semiconductor | 类似代替 | TO-5-3 |
PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR
|
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