Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/minimum current amplification factor (hFE): 60 @50µA, 5V
Technical parameters/Maximum current amplification factor (hFE): 300
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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TI | 功能相似 |
NTE ELECTRONICS 2N3702 晶体管, PNP, 200mA, 25V, TO-92
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ON Semiconductor | 功能相似 | TO-92 |
NTE ELECTRONICS 2N3702 晶体管, PNP, 200mA, 25V, TO-92
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2N3702
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Central Semiconductor | 功能相似 | TO-226-3 |
NTE ELECTRONICS 2N3702 晶体管, PNP, 200mA, 25V, TO-92
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2N3702LEADFREE
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Alpha Wire | 功能相似 |
Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
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