Technical parameters/dissipated power: 1000 mW
Technical parameters/gain bandwidth product: 150 MHz
Technical parameters/breakdown voltage (collector emitter): 150 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 300
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39-3
External dimensions/length: 9.4 mm
External dimensions/width: 9.4 mm
External dimensions/height: 6.6 mm
External dimensions/packaging: TO-39-3
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JAN2N3501
|
Microsemi | 完全替代 | TO-205 |
NPN硅晶体管 NPN SILICON TRANSISTOR
|
||
JAN2N3501
|
Semicoa Semiconductor | 完全替代 | TO-39 |
NPN硅晶体管 NPN SILICON TRANSISTOR
|
||
JANS2N3501
|
Microsemi | 类似代替 | TO-39 |
NPN硅晶体管 NPN SILICON TRANSISTOR
|
||
|
|
ON Semiconductor | 类似代替 | TO-39 |
NPN硅晶体管 NPN SILICON TRANSISTOR
|
||
JANTX2N3501
|
Semicoa Semiconductor | 类似代替 | TO-39 |
NPN硅晶体管 NPN SILICON TRANSISTOR
|
||
JANTX2N3501
|
MSC | 类似代替 | TO-39-3 |
NPN硅晶体管 NPN SILICON TRANSISTOR
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review