Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 10V
Technical parameters/rated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-18-3
External dimensions/packaging: TO-18-3
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Infineon | 完全替代 | TO-18 |
抗辐射 RADIATION HARDENED
|
||
|
|
ON Semiconductor | 完全替代 |
抗辐射 RADIATION HARDENED
|
|||
2N2906A
|
Semicoa Semiconductor | 完全替代 | BCY |
抗辐射 RADIATION HARDENED
|
||
2N2906A
|
Raytheon | 完全替代 |
抗辐射 RADIATION HARDENED
|
|||
2N2906A
|
Microsemi | 完全替代 | TO-18-3 |
抗辐射 RADIATION HARDENED
|
||
2N2906A
|
Fairchild | 完全替代 | TO-205 |
抗辐射 RADIATION HARDENED
|
||
2N2906A
|
Semelab | 完全替代 | TO-18 |
抗辐射 RADIATION HARDENED
|
||
2N2906A
|
Multicomp | 完全替代 | TO-18 |
抗辐射 RADIATION HARDENED
|
||
JANTX2N2906A
|
Microchip | 完全替代 | TO-18-3 |
PNP小信号硅晶体管 PNP SMALL SIGNAL SILICON TRANSISTOR
|
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