Technical parameters/dissipated power: 600 mW
Technical parameters/gain bandwidth product: 200 MHz
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 40 @10mA, 10V
Technical parameters/rated power (Max): 600 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 600 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-39-3
External dimensions/length: 9.4 mm
External dimensions/width: 9.4 mm
External dimensions/height: 6.6 mm
External dimensions/packaging: TO-39-3
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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2N2904A Series 60V 600mA 800mW Through Hole PNP Silicon Transistor - TO-39
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2N2904ALEADFREE
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Microsemi | 类似代替 | TO-5 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
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