Technical parameters/breakdown voltage: 30 V
Technical parameters/rated power (Max): 300 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-206
External dimensions/packaging: TO-206
Other/Product Lifecycle: End of Life
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Intersil | 完全替代 |
P沟道J- FET P-CHANNEL J-FET
|
|||
|
|
InterFET | 完全替代 | TO-18-3 |
P沟道J- FET P-CHANNEL J-FET
|
||
2N2609
|
Central Semiconductor | 完全替代 | TO-18 |
P沟道J- FET P-CHANNEL J-FET
|
||
2N5460
|
Vishay Siliconix | 功能相似 | TO-92 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA
|
||
2N5460
|
Motorola | 功能相似 | TO-92 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA
|
||
|
|
Visay | 功能相似 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA
|
|||
|
|
NTE Electronics | 功能相似 | TO-92 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA
|
||
2N5460
|
Allegro MicroSystems | 功能相似 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA
|
|||
2N5460
|
Rochester | 功能相似 | TO-92 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA
|
||
2N5460
|
Central Semiconductor | 功能相似 | TO-226-3 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA
|
||
2N5460
|
Intersil | 功能相似 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA
|
|||
2N5460
|
ON Semiconductor | 功能相似 | TO-226-3 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA
|
||
2N5460
|
VISHAY | 功能相似 | TO-92 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA
|
||
2N5460
|
Major Brands | 功能相似 | TO-92 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA
|
||
2N5461
|
TI | 功能相似 |
Trans JFET P-CH Si 3Pin TO-92
|
|||
2N5461
|
National Semiconductor | 功能相似 |
Trans JFET P-CH Si 3Pin TO-92
|
|||
2N5461
|
Motorola | 功能相似 | TO-92 |
Trans JFET P-CH Si 3Pin TO-92
|
||
2N5461
|
Intersil | 功能相似 |
Trans JFET P-CH Si 3Pin TO-92
|
|||
2N5461
|
Rochester | 功能相似 | TO-92 |
Trans JFET P-CH Si 3Pin TO-92
|
||
2N5461
|
Vishay Siliconix | 功能相似 | TO-226 |
Trans JFET P-CH Si 3Pin TO-92
|
||
2N5461
|
Visay | 功能相似 |
Trans JFET P-CH Si 3Pin TO-92
|
|||
2N5461
|
Vishay Semiconductor | 功能相似 | TO-92 |
Trans JFET P-CH Si 3Pin TO-92
|
||
2N5461
|
Fairchild | 功能相似 | TO-92-3 |
Trans JFET P-CH Si 3Pin TO-92
|
||
2N5461
|
VISHAY | 功能相似 | TO-92 |
Trans JFET P-CH Si 3Pin TO-92
|
||
JAN2N2609
|
Solitron Devices | 功能相似 | TO-18 |
JAN QPL LOW POWER FIELD EFFECT TRANSISTORS
|
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