Technical parameters/dissipated power: 0.36 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 225 @10mA, 5V
Technical parameters/rated power (Max): 360 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 360 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SMD-3
External dimensions/packaging: SMD-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTX2N2484UB
|
Semicoa Semiconductor | 功能相似 | SOT |
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3
|
||
JANTX2N2484UB
|
Aeroflex | 功能相似 |
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3
|
|||
JANTXV2N2484UB
|
Semicoa Semiconductor | 功能相似 | SOT |
Trans GP BJT NPN 60V 0.05A 3Pin CSOT-23
|
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