Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 55 V
Technical parameters/maximum allowable collector current: 3A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-8
External dimensions/packaging: TO-8
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N1484
|
Microsemi | 完全替代 | TO-8 |
NPN硅中功率晶体管 NPN SILICON MEDIUM POWER TRANSISTOR
|
||
JAN2N1484
|
Microsemi | 完全替代 | TO-8 |
NPN硅中功率晶体管 NPN SILICON MEDIUM POWER TRANSISTOR
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review