Technical parameters/power supply voltage (DC): 2.70V (min)
Technical parameters/output current: ≤30 mA
Technical parameters/power supply current: 230 µA
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/Input compensation drift: 2.50 µV/K
Technical parameters/bandwidth: 2.8 MHz
Technical parameters/conversion rate: 2.30 V/μs
Technical parameters/gain bandwidth product: 2.8 MHz
Technical parameters/input compensation voltage: 700 µV
Technical parameters/input bias current: 1 pA
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/gain bandwidth: 2.8 MHz
Technical parameters/Common Mode Rejection Ratio (Min): 75 dB
Technical parameters/power supply voltage: 2.7V ~ 6V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: DIP-8
External dimensions/length: 10.16 mm
External dimensions/width: 0.28 in
External dimensions/height: 4.95 mm
External dimensions/packaging: DIP-8
Physical parameters/operating temperature: -40℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Testing and Measurement, Automotive, Signal Processing, Signal Processing
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MCP601T-E/SN
|
Microchip | 完全替代 | SOIC-8 |
运算放大器 - 运放 Single 2.7V
|
||
MCP603-E/P
|
Microchip | 完全替代 | DIP-8 |
MCP601/602/603/604 运算放大器 ### 运算放大器，Microchip
|
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