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Model SIHW33N60E-GE3
Description VISHAY SIHW33N60E-GE3 Field effect transistor, MOSFET, N-channel, 600V, 33A, TO-247AD-3
Product QR code
Brand: Vishay Semiconductor
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
20.86  yuan 20.86yuan
5+:
$ 24.4109
50+:
$ 23.3677
200+:
$ 22.7835
500+:
$ 22.6374
1000+:
$ 22.4914
2500+:
$ 22.3245
5000+:
$ 22.2202
7500+:
$ 22.1158
Quantity
5+
50+
200+
500+
1000+
Price
$24.4109
$23.3677
$22.7835
$22.6374
$22.4914
Price $ 24.4109 $ 23.3677 $ 22.7835 $ 22.6374 $ 22.4914
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2395) Minimum order quantity(5)
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Technical parameters/number of channels: 1

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.083 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 278 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/leakage source breakdown voltage: 600 V

Technical parameters/rise time: 60 ns

Technical parameters/descent time: 54 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 55 ℃

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-247-3

External dimensions/packaging: TO-247-3

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IPW60R099CPFKSA1 IPW60R099CPFKSA1 Infineon 功能相似 TO-247-3
INFINEON IPW60R099CPFKSA1 功率场效应管, MOSFET, N沟道, 31 A, 600 V, 99 mohm, 10 V, 3 V
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