Technical parameters/forward voltage: 962mV @2A
Technical parameters/reverse recovery time: 1.8 µs
Technical parameters/forward voltage (Max): 962mV @2A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: PowerDFN-3
External dimensions/packaging: PowerDFN-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AS4PG-M3/86A
|
Vishay Semiconductor | 功能相似 | TO-277 |
2A 至 10A 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 ### 二极管和整流器,Vishay Semiconductor
|
||
AS4PG-M3/86A
|
Vishay Siliconix | 功能相似 |
2A 至 10A 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 ### 二极管和整流器,Vishay Semiconductor
|
|||
AS4PG-M3/86A
|
VISHAY | 功能相似 | TO-277 |
2A 至 10A 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 ### 二极管和整流器,Vishay Semiconductor
|
||
AS4PG-M3/87A
|
Vishay Semiconductor | 完全替代 | PowerDFN-3 |
Diode 400V 4A 3Pin SMPC T/R
|
||
AS4PGHM3/87A
|
Vishay Semiconductor | 类似代替 | PowerDFN-3 |
Diode 400V 4A 3Pin SMPC T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review